Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated. The maximum current gain of 40 at a current density of 370 A/cm(2) is obtained for the device with an active area of 0.065 mm(2). A maximum open-base breakdown voltage (BV) of 5.85 kV is measured, which is 93% of the theoretical BV. A specific ON-resistance (R-ON) of 28 m Omega.cm(2) was obtained.
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机译：已经制造了具有多浅沟道结终止延伸的免注入4H-SiC双极结晶体管。对于有源面积为0.065 mm（2）的设备，在370 A / cm（2）的电流密度下可获得40的最大电流增益。测得的最大开路击穿电压（BV）为5.85 kV，为理论BV的93％。获得了28 m Omega.cm（2）的特定导通电阻（R-ON）。
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